DatasheetsPDF.com

FDMS3602S Dataheets PDF



Part Number FDMS3602S
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description MOSFET
Datasheet FDMS3602S DatasheetFDMS3602S Datasheet (PDF)

FDMS3602S PowerTrench® Power Stage FDMS3602S PowerTrench® Power Stage July 2016 25 V Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel „ Max rDS(on) = 5.6 mΩ at VGS = 10 V, ID = 15 A „ Max rDS(on) = 8.1 mΩ at VGS = 4.5 V, ID = 14 A Q2: N-Channel „ Max rDS(on) = 2.2 mΩ at VGS = 10 V, ID = 26 A „ Max rDS(on) = 3.4 mΩ at VGS = 4.5 V, ID = 22 A „ Low inductance packaging shortens rise/fall times, resulting in lower switching losses „ MOSFET integration enables optimum.

  FDMS3602S   FDMS3602S


Document
FDMS3602S PowerTrench® Power Stage FDMS3602S PowerTrench® Power Stage July 2016 25 V Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel „ Max rDS(on) = 5.6 mΩ at VGS = 10 V, ID = 15 A „ Max rDS(on) = 8.1 mΩ at VGS = 4.5 V, ID = 14 A Q2: N-Channel „ Max rDS(on) = 2.2 mΩ at VGS = 10 V, ID = 26 A „ Max rDS(on) = 3.4 mΩ at VGS = 4.5 V, ID = 22 A „ Low inductance packaging shortens rise/fall times, resulting in lower switching losses „ MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing „ RoHS Compliant This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFETTM (Q2) have been designed to provide optimal power efficiency. Applications „ Computing „ Communications „ General Purpose Point of Load „ Notebook VCORE .


FDMS3600S FDMS3602S FDMS3606AS


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)