FDB3502 N-Channel Power Trench® MOSFET
May 2008
FDB3502
N-Channel Power Trench® MOSFET
75V, 14A, 47mΩ
tm
Features
General Description
Max rDS(on) = 47mΩ at VGS = 10V, ID = 6A 100% UIL Tested RoHS Compliant
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has
been especially tailored to minimiz...
