FDD306P P-Channel 1.8V Specified PowerTrench® MOSFET
March 2015
FDD306P P-Channel 1.8V Specified PowerTrench® MOSFET
Features
■ –6.7 A, –12 V.
RDS(ON) = 28 mΩ @ VGS = –4.5 V RDS(ON) = 41 mΩ @ VGS = –2.5 V RDS(ON) = 90 mΩ @ VGS = –1.8 V
■ Fast switching speed
■ High performance trench technology for extremely low RDS(ON)
■ High power and current handling ...
