FDD3860 N-Channel PowerTrench® MOSFET
FDD3860
N-Channel PowerTrench® MOSFET
100 V, 29 A, 36 mΩ
Features
Max rDS(on) = 36 mΩ at VGS = 10 V, ID = 5.9 A High Performance Trench Technology for Extremely Low
rDS(on) 100% UIL Tested
RoHS Compliant
September 2016
General Description
This N-Channel MOSFET is rugged gate version of Fairchild Semiconductor‘s...
