FDD5353

FDD5353 N-Channel Power Trench® MOSFET April 2015 FDD5353 N-Channel Power Trench® MOSFET 60V, 50A, 12.3m Features General Description  Max rDS(on) = 12.3m at VGS = 10V, ID = 10.7A  Max rDS(on) = 15.4m at VGS = 4.5V, ID = 9.5A  100% UIL Tested This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.  RoHS Compliant Application  Inverter  Synchronous rectifier  Primary switch G S D DT O-P-2A5K2 (T O -25 2) D G S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pulsed TC = 25°C TA = 25°C Single Pulse Avalanche Energy Power Dissipation TC = 25°C Power Dissipation TA = 25°C Operating and Storage Junction Temperature Range Thermal Char...