FDT1600N10ALZ

FDT1600N10ALZ — N-Channel PowerTrench® MOSFET FDT1600N10ALZ N-Channel PowerTrench® MOSFET 100 V, 5.6 A, 160 mΩ November 2013 Features RDS(on) = 121 mΩ (Typ.) @ VGS = 10 V, ID = 2.8 A RDS(on) = 156 mΩ (Typ.) @ VGS = 5 V, ID = 1.8 A Low Gate Charge (Typ. 2.9 nC) Low Crss (Typ. 2.04 pF) Fast Switching 100% Avalanche Tested Improved dv/dt Capability RoHS Compliant Description This N-Channel MOSFET is produced using Fairchld Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance and maintain superior switching performance. Application Consumer Appliances LED TV and Monitor Synchronous Rectification Uninterruptible Power Supply Micro Solar Inverter D D SOT-223 S D G GDS MOSFET Maximum Ratings TC = 25 °C unless otherwise noted. Symbol VDSS VGSS ID IDM EAS dv/dt Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulse Avalanche Energy Peak D...