FDT86106LZ N-Channel PowerTrench® MOSFET
FDT86106LZ
N-Channel PowerTrench® MOSFET
100 V, 3.2 A, 108 mΩ
Features
General Description
January 2013
Max rDS(on) = 108 mΩ at VGS = 10 V, ID = 3.2 A Max rDS(on) = 153 mΩ at VGS = 4.5 V, ID = 2.7 A High performance trench technology for extremely low rDS(on) High power and current handling capability i...
