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FDS4897AC Dataheets PDF



Part Number FDS4897AC
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description MOSFET
Datasheet FDS4897AC DatasheetFDS4897AC Datasheet (PDF)

FDS4897AC Dual N & P-Channel PowerTrench® MOSFET FDS4897AC October 2008 Dual N & P-Channel PowerTrench® MOSFET N-Channel: 40 V, 6.1 A, 26 mΩ P-Channel: -40 V, -5.2 A, 39 mΩ Features General Description Q1: N-Channel „ Max rDS(on) = 26 mΩ at VGS = 10 V, ID = 6.1 A „ Max rDS(on) = 31 mΩ at VGS = 4.5 V, ID = 5.6 A Q2: P-Channel „ Max rDS(on) = 39 mΩ at VGS = -10 V, ID = -5.2 A „ Max rDS(on) = 65 mΩ at VGS = -4.5 V, ID = -4.1 A „ 100% UIL Tested „ RoHS Compliant These dual N- and P-Channel MO.

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FDS4897AC Dual N & P-Channel PowerTrench® MOSFET FDS4897AC October 2008 Dual N & P-Channel PowerTrench® MOSFET N-Channel: 40 V, 6.1 A, 26 mΩ P-Channel: -40 V, -5.2 A, 39 mΩ Features General Description Q1: N-Channel „ Max rDS(on) = 26 mΩ at VGS = 10 V, ID = 6.1 A „ Max rDS(on) = 31 mΩ at VGS = 4.5 V, ID = 5.6 A Q2: P-Channel „ Max rDS(on) = 39 mΩ at VGS = -10 V, ID = -5.2 A „ Max rDS(on) = 65 mΩ at VGS = -4.5 V, ID = -4.1 A „ 100% UIL Tested „ RoHS Compliant These dual N- and P-Channel MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Applications „ Inverter „ Power Supplies D2 D2 D1 D1 Pin 1 G2 S2 G1 S1 SO-8 D2 5 D2 6 D1 7 D1 8 Q2 Q1 4 G2 3 S2 2 G1 1 S1 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current .


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