Document
FDS4897AC Dual N & P-Channel PowerTrench® MOSFET
FDS4897AC
October 2008
Dual N & P-Channel PowerTrench® MOSFET
N-Channel: 40 V, 6.1 A, 26 mΩ P-Channel: -40 V, -5.2 A, 39 mΩ
Features
General Description
Q1: N-Channel Max rDS(on) = 26 mΩ at VGS = 10 V, ID = 6.1 A Max rDS(on) = 31 mΩ at VGS = 4.5 V, ID = 5.6 A
Q2: P-Channel Max rDS(on) = 39 mΩ at VGS = -10 V, ID = -5.2 A Max rDS(on) = 65 mΩ at VGS = -4.5 V, ID = -4.1 A 100% UIL Tested RoHS Compliant
These dual N- and P-Channel MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
Applications
Inverter Power Supplies
D2 D2 D1 D1
Pin 1
G2 S2 G1 S1
SO-8
D2 5 D2 6 D1 7 D1 8
Q2 Q1
4 G2 3 S2 2 G1 1 S1
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS ID
PD
Parameter Drain to Source Voltage Gate to Source Voltage Drain Current .