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FDS6911 Dataheets PDF



Part Number FDS6911
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description MOSFET
Datasheet FDS6911 DatasheetFDS6911 Datasheet (PDF)

FDS6911 Dual N-Channel Logic level PowerTrench® MOSFET December 2011 FDS6911 Dual N-Channel Logic Level PowerTrench® MOSFET 20V, 7.5A, 13mΩ General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss .

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FDS6911 Dual N-Channel Logic level PowerTrench® MOSFET December 2011 FDS6911 Dual N-Channel Logic Level PowerTrench® MOSFET 20V, 7.5A, 13mΩ General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features „ rDS(on) = 13 mΩ @ VGS = 10 V rDS(on) = 17 mΩ @ VGS = 4.5 V „ Fast switching speed „ Low gate charge „ High performance trench technology for extremely low RDS(ON) „ High power and current handling capability DD2 DD2 DD1 DD1 SO-8 Pin 1 SO-8 G2 S2 G G1 S1 S S S S1 1 G1 2 S2 3 G2 4 Q1 8 D1 7 D1 Q2 6 D2 5 D2 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Vo.


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