Document
FDS6911 Dual N-Channel Logic level PowerTrench® MOSFET
December 2011
FDS6911
Dual N-Channel Logic Level PowerTrench® MOSFET
20V, 7.5A, 13mΩ
General Description
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features
rDS(on) = 13 mΩ @ VGS = 10 V rDS(on) = 17 mΩ @ VGS = 4.5 V
Fast switching speed Low gate charge
High performance trench technology for extremely low RDS(ON)
High power and current handling capability
DD2 DD2 DD1 DD1
SO-8
Pin 1 SO-8
G2
S2 G
G1
S1 S
S
S
S1 1 G1 2 S2 3 G2 4
Q1 8 D1 7 D1
Q2 6 D2 5 D2
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS VGSS ID
PD
Parameter
Drain-Source Voltage Gate-Source Vo.