FDZ663P

FDZ663P P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET FDZ663P December 2011 P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET -20 V, -2.7 A, 134 mΩ Features General Description „ Max rDS(on) = 134 mΩ at VGS = -4.5 V, ID = -2 A „ Max rDS(on) = 171 mΩ at VGS = -2.5 V, ID = -1.5 A „ Max rDS(on) = 216 mΩ at VGS = -1.8 V, ID = -1 A „ Max rDS(on) = 288 mΩ at VGS = -1.5 V, ID = -1 A „ Occupies only 0.64 mm2 of PCB area. Less than 16% of the area of 2 x 2 BGA „ Ultra-thin package: less than 0.4 mm height when mounted to PCB „ RoHS Compliant Designed on Fairchild's advanced 1.5 V PowerTrench® process with state of the art "fine pitch" Thin WLCSP packaging process, the FDZ663P minimizes both PCB space and rDS(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile (0.4 mm) and small (0.8x0.8 mm2) packaging, low gate charge, and low r...