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FGB3236_F085 Dataheets PDF



Part Number FGB3236_F085
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel Ignition IGBT
Datasheet FGB3236_F085 DatasheetFGB3236_F085 Datasheet (PDF)

FGB3236_F085 / FGI3236_F085 320mJ, 360V, N-Channel Ignition IGBT October 2013 FGB3236_F085 / FGI3236_F085 EcoSPARKŠ 320mJ, 360V, N-Channel Ignition IGBT Features „ Industry Standard D2-Pak package „ SCIS Energy = 320mJ at TJ = 25oC „ Logic Level Gate Drive „ Qualified to AEC Q101 „ RoHS Compliant Applications „ Automotive lgnition Coil Driver Circuits „ Coil On Plug Applications Package GATE EMITTER COLLECTOR JEDEC TO-263AB D2-Pak E G COLLECTOR TO262AB (FLANGE) FDI SERIES @2008 Fai.

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FGB3236_F085 / FGI3236_F085 320mJ, 360V, N-Channel Ignition IGBT October 2013 FGB3236_F085 / FGI3236_F085 EcoSPARKŠ 320mJ, 360V, N-Channel Ignition IGBT Features „ Industry Standard D2-Pak package „ SCIS Energy = 320mJ at TJ = 25oC „ Logic Level Gate Drive „ Qualified to AEC Q101 „ RoHS Compliant Applications „ Automotive lgnition Coil Driver Circuits „ Coil On Plug Applications Package GATE EMITTER COLLECTOR JEDEC TO-263AB D2-Pak E G COLLECTOR TO262AB (FLANGE) FDI SERIES @2008 Fairchild Semiconductor Corporation FGB3236_F085 / FGI3236_F085 Rev. A1 1 www.fairchildsemi.com FGB3236_F085 / FGI3236_F085 320mJ, 360V, N-Channel Ignition IGBT Device Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter BVCER Collector to Emitter Breakdown Voltage (IC = 1mA) BVECS Emitter to Collector Voltage - Reverse Battery Condition (IC = 10mA) ESCIS25 Self Clamping Inductive Switching Energy (ISCIS = 14.7A, L = 3.0mHy, TJ = 25°C) ESCIS150 Self Clamping Inducti.


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