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FGD3325G2_F085

Fairchild Semiconductor

N-Channel Ignition IGBT

FGD3325G2_F085 EcoSPARK®2 330mJ, 250V, N-Channel Ignition IGBT FGD3325G2_F085 EcoSPARK®2 330mJ, 250V, N-Channel Ignitio...


Fairchild Semiconductor

FGD3325G2_F085

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Description
FGD3325G2_F085 EcoSPARK®2 330mJ, 250V, N-Channel Ignition IGBT FGD3325G2_F085 EcoSPARK®2 330mJ, 250V, N-Channel Ignition IGBT April 2015 Features „ SCIS Energy = 330mJ at TJ = 25oC „ Logic Level Gate Drive „ Qualified to AEC Q101 „ RoHS Compliant Applications „ Automotive lgnition Coil Driver Circuits „ Coil On Plug Applications Package GATE EMITTER COLLECTOR JEDEC TO-252 D-Pak @2015 Fairchild Semiconductor Corporation FGD3325G2_F085 Rev. 1.0 1 www.fairchildsemi.com FGD3325G2_F085 EcoSPARK®2 330mJ, 250V, N-Channel Ignition IGBT Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter BVCER Collector to Emitter Breakdown Voltage (IC = 1mA) BVECS Emitter to Collector Voltage - Reverse Battery Condition (IC = 10mA) ESCIS25 ISCIS = 14.8A, L = 3.0mHy, RGE = 1KΩ TC = 25°C ESCIS150 ISCIS = 11.4A, L = 3.0mHy, RGE = 1KΩ TC = 150°C IC25 Collector Current Continuous, at VGE = 5.0V, TC = 25°C IC110 Collector Current Continuous, at VGE = 5.0V...




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