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FDMB3900AN

Part Number	FDMB3900AN
Manufacturer	Fairchild Semiconductor
Description	Dual N-Channel MOSFET
Published	Jan 10, 2017
Detailed Description	FDMB3900AN Dual N-Channel PowerTrench® MOSFET FDMB3900AN Dual N-Channel PowerTrench® MOSFET 25 V, 7.0 A, 23 mΩ June 20...
Datasheet	FDMB3900AN PDF File

Overview

FDMB3900AN Dual N-Channel PowerTrench® MOSFET FDMB3900AN Dual N-Channel PowerTrench® MOSFET 25 V, 7.
0 A, 23 mΩ June 2013 Features General Description Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7.
0 A Max rDS(on) = 33 mΩ at VGS = 4.
5 V, ID = 5.
5 A Fast switching speed These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Low gate charge High performance trench technology for extremely low rDS(on) High power and current handling capability These devices are well suited for low voltage and battery powered ...

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FDMB3900AN Dual N-Channel MOSFET - Fairchild Semiconductor

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