FDMC86340ET80

FDMC86340ET80 N-Channel Shielded Gate Power Trench® MOSFET January 2015 FDMC86340ET80 N-Channel Shielded Gate Power Trench® MOSFET 80 V, 68 A, 6.5 mΩ Features General Description „ Extended TJ rating to 175°C „ Shielded Gate MOSFET Technology „ Max rDS(on) = 6.5 mΩ at VGS = 10 V, ID = 14 A „ Max rDS(on) = 8.5 mΩ at VGS = 8 V, ID = 12 A „ High performance technology for extremely low rDS(on) „ Termination is Lead-free This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. Application „ DC-DC Conversion „ RoHS Compliant Pin 1 Pin 1 SS SG S S D D D DDD Top Bottom Power 33 SD GD MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuou...