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FDMS86150ET100

Fairchild Semiconductor
Part Number FDMS86150ET100
Manufacturer Fairchild Semiconductor
Description MOSFET
Published Jan 10, 2017
Detailed Description FDMS86150ET100 N-Channel Shielded Gate PowerTrench® MOSFET FDMS86150ET100 N-Channel Shielded Gate PowerTrench® MOSFET 1...
Datasheet PDF File FDMS86150ET100 PDF File

FDMS86150ET100
FDMS86150ET100

Overview
FDMS86150ET100 N-Channel Shielded Gate PowerTrench® MOSFET FDMS86150ET100 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 128 A, 4.
85 mΩ January 2015 Features „ Extended TJ rating to 175°C „ Shielded Gate MOSFET Technology „ Max rDS(on) = 4.
85 mΩ at VGS = 10 V, ID = 16 A „ Max rDS(on) = 7.
8 mΩ at VGS = 6 V, ID = 13 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology.
This process has been optimized for the on-state resistance and yet ma...


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