FDMS86350ET80

FDMS86350ET80 N-Channel PowerTrench® MOSFET January 2015 FDMS86350ET80 N-Channel PowerTrench® MOSFET 80 V, 198 A, 2.4 mΩ Features General Description „ Extended TJ rating to 175°C „ Max rDS(on) = 2.4 mΩ at VGS = 10 V, ID = 25 A „ Max rDS(on) = 3.2 mΩ at VGS = 8 V, ID = 22 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Applications „ Primary MOSFET „ Synchronous Rectifier „ Load Switch „ Motor Control Switch Top Pin 1 Bottom S Pin 1 S S G S S D D D D D D SD GD Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous...