FDMS8050ET30

FDMS8050ET30 N-Channel PowerTrench® MOSFET January 2015 FDMS8050ET30 N-Channel PowerTrench® MOSFET 30 V, 423 A, 0.65 mΩ Features General Description „ Extended TJ rating to 175°C „ Max rDS(on) = 0.65 mΩ at VGS = 10 V, ID = 55 A „ Max rDS(on) = 0.9 mΩ at VGS = 4.5 V, ID = 47 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge and extremely low rDS(on). Applications „ OringFET „ Synchronous Rectifier Top Pin 1 Bottom S Pin 1 S S G S S D D D D Power 56 S G D D D D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain ...