FDMC86259P

FDMC86259P P-Channel PowerTrench® MOSFET February 2014 FDMC86259P P-Channel PowerTrench® MOSFET -150 V, -13 A, 107 m: Features General Description „ Max rDS(on) = 107 m: at VGS = -10 V, ID = -3 A „ Max rDS(on) = 137 m: at VGS = -6 V, ID = -2.7 A „ Very low RDS-on mid voltage P channel silicon technology optimised for low Qg This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. „ This product is optimised for fast switching applications as well as load switch applications „ 100% UIL Tested „ RoHS Compliant Applications „ Active Clamp Switch „ Load Switch Pin 1 Pin 1 SS S G D D DD Top Bottom Power 33 S S S G D D D D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continu...