DatasheetsPDF.com

FDMC4435BZ

Fairchild Semiconductor
Part Number FDMC4435BZ
Manufacturer Fairchild Semiconductor
Description MOSFET
Published Jan 10, 2017
Detailed Description FDMC4435BZ P-Channel Power Trench® MOSFET FDMC4435BZ P-Channel Power Trench® MOSFET -30 V, -18 A, 20 mΩ November 2015 ...
Datasheet PDF File FDMC4435BZ PDF File

FDMC4435BZ
FDMC4435BZ

Overview
FDMC4435BZ P-Channel Power Trench® MOSFET FDMC4435BZ P-Channel Power Trench® MOSFET -30 V, -18 A, 20 mΩ November 2015 Features General Description „ Max rDS(on) = 20 mΩ at VGS = -10 V, ID = -8.
5 A „ Max rDS(on) = 37 mΩ at VGS = -4.
5 V, ID = -6.
3 A „ Extended VGSS range (-25 V) for battery applications „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability „ HBM ESD protection level >7 kV typical (Note 4) „ 100% UIL Tested „ Termination is Lead-free and RoHS Compliant This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance.
T...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)