FDMC6686P

FDMC6686P P-Channel PowerTrench® MOSFET February 2015 FDMC6686P P-Channel PowerTrench® MOSFET -20 V, -56 A, 4 mΩ Features General Description „ Max rDS(on) = 4 mΩ at VGS = -4.5 V, ID = -18 A „ Max rDS(on) = 5.7 mΩ at VGS = -2.5 V, ID = -16 A „ Max rDS(on) =11.5 mΩ at VGS = -1.8 V, ID = -11 A „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability in a widely used surface mount package „ Lead-free and RoHS Compliant This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(ON), switching performance and ruggedness. Applications „ Load Switch „ Battery Management „ Power Management „ Reverse Polarity Protection Pin 1 Pin 1 S S SG D DD D S S S G D D D D Top Bottom Power 33 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -C...