FDMC86139P P-Channel PowerTrench® MOSFET
FDMC86139P
P-Channel PowerTrench® MOSFET
-100 V, -15 A, 67 mΩ
June 2014
Features
General Description
Max rDS(on) = 67 mΩ at VGS = -10 V, ID = -4.4 A Max rDS(on) = 89 mΩ at VGS = -6 V, ID = -3.6 A Very low RDS-on mid voltage P channel silicon technology
optimised for low Qg
This P-Channel MOSFET is produced...
