FDMC8015L

FDMC8015L N-Channel PowerTrench® MOSFETTM FDMC8015L N-Channel Power Trench® MOSFET 40 V, 18 A, 26 mΩ October 2013 Features General Description „ Max rDS(on) = 26 mΩ at VGS = 10 V, ID = 7 A „ Max rDS(on) = 36 mΩ at VGS = 4.5 V, ID = 6 A „ Low Profile - 1 mm max in Power 33 „ 100% UIL Tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Applications „ Load Switch „ Motor Bridge Switch Top 8765 Bottom DD D D 1 234 GS S S MLP 3.3x3.3 D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed TC = 25°C TC = 25°C TA = 25°C Single Pulse Avalanche Energy Power Dissip...