FDMS7682 N-Channel PowerTrench® MOSFET
January 2015
FDMS7682
N-Channel PowerTrench® MOSFET
30 V, 6.3 mΩ
Features
Max rDS(on) = 6.3 mΩ at VGS = 10 V, ID = 14 A Max rDS(on) = 10.4 mΩ at VGS = 4.5 V, ID = 11 A Advanced Package and Silicon combination for low rDS(on)
and high efficiency
Next generation enhanced body diode technology, engineered for so...
