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FDMS3662

Part Number	FDMS3662
Manufacturer	Fairchild Semiconductor
Description	MOSFET
Published	Jan 10, 2017
Detailed Description	FDMS3662 N-Channel Power Trench® MOSFET November 2014 FDMS3662 N-Channel Power Trench® MOSFET 100V, 39A, 14.8mΩ Featu...
Datasheet	FDMS3662 PDF File

Overview

FDMS3662 N-Channel Power Trench® MOSFET November 2014 FDMS3662 N-Channel Power Trench® MOSFET 100V, 39A, 14.
8mΩ Features General Description Max rDS(on) = 14.
8mΩ at VGS = 10V, ID = 8.
9A Advanced Package and Silicon combination for low rDS(on) MSL1 robust package design This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
100% UIL Tested RoHS Compliant Application DC - DC Conversion Top Bottom Pin 1 Pin 1 S S S G D D D D Power 56 S S S G D D D D MOSFET Maximum Ratings TA = 25°C unless otherwise noted Sym...

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