FDMS86202

FDMS86202 N-Channel Shielded Gate PowerTrench® MOSFET July 2014 FDMS86202 N-Channel Shielded Gate PowerTrench® MOSFET 120 V, 64 A, 7.2 mΩ Features „ Shielded Gate MOSFET Technology „ Max rDS(on) = 7.2 mΩ at VGS = 10 V, ID = 13.5 A „ Max rDS(on) = 10.3 mΩ at VGS = 6 V, ID = 11.5 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ MSL1 robust package design „ 100% UIL tested General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. Application „ DC-DC Conversion „ RoHS Compliant Top Pin 1 Bottom S Pin 1 S S G S S D D D D D D SD GD Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Cont...