MOSFET
FDMS86202 N-Channel Shielded Gate PowerTrench® MOSFET
July 2014
FDMS86202
N-Channel Shielded Gate PowerTrench® MOSFET
...
Description
FDMS86202 N-Channel Shielded Gate PowerTrench® MOSFET
July 2014
FDMS86202
N-Channel Shielded Gate PowerTrench® MOSFET
120 V, 64 A, 7.2 mΩ
Features
Shielded Gate MOSFET Technology Max rDS(on) = 7.2 mΩ at VGS = 10 V, ID = 13.5 A Max rDS(on) = 10.3 mΩ at VGS = 6 V, ID = 11.5 A Advanced Package and Silicon combination for low rDS(on)
and high efficiency MSL1 robust package design 100% UIL tested
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
Application
DC-DC Conversion
RoHS Compliant
Top Pin 1
Bottom S Pin 1 S S G
S S
D D
D D D D
SD GD
Power 56
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS
ID
EAS PD TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous -Cont...
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