MOSFET
FDMD86100 Dual N-Channel Shielded Gate PowerTrench® MOSFET
February 2015
FDMD86100
Dual N-Channel Shielded Gate PowerT...
Description
FDMD86100 Dual N-Channel Shielded Gate PowerTrench® MOSFET
February 2015
FDMD86100
Dual N-Channel Shielded Gate PowerTrench® MOSFET
100 V, 39 A, 10.5 mΩ
Features
General Description
Common source configuration to eliminate PCB routing
Large source pad on bottom of package for enhanced thermals
Shielded Gate MOSFET Technology
Max rDS(on) = 10.5 mΩ at VGS = 10 V, ID = 10 A Max rDS(on) = 17.3 mΩ at VGS = 6 V, ID = 7.8 A Ideal for flexible layout in secondary side synchronous
rectification
Termination is Lead-free and RoHS Compliant 100% UIL tested
This package integrates two N-Channel devices connected internally in common-source configuration and incorporates Shielded Gate technology. This enables very low package parasitics and optimized thermal path to the common source pad on the bottom. Provides a very small footprint (5 x 6 mm) for higher power density.
Applications
Isolated DC-DC Synchronous Rectifiers
Common Ground Load Switches
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