FDMD84100

FDMD84100 Dual N-Channel PowerTrench® MOSFET June 2016 FDMD84100 Dual N-Channel PowerTrench® MOSFET 100 V, 21 A, 20 mΩ Features General Description „ Max rDS(on) = 20 mΩ at VGS = 10 V, ID = 7 A „ Max rDS(on) = 32 mΩ at VGS = 6 V, ID = 5.5 A „ Ideal for flexible layout in secondary side synchronous rectification This package integrates two N-Channel devices connected internally in common-source configuration. This enables very low package parasitics and optimized thermal path to the common source pad on the bottom. Provides a very small footprint (3.3 x 5 mm) for higher power density. „ Termination is Lead-free and RoHS Compliant „ 100% UIL tested Applications „ Isolated DC-DC Synchronous Rectifiers „ Common Ground Load Switches Top Pin 1 D2 D2 D2 G2 Bottom S1/S2 Power 3.3 x 5 Pin 1 G1 D1 D1 D1 G1 1 D1 2 D1 3 D1 4 S1,S2 to backside 8 D2 7 D2 6 D2 5 G2 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Dr...