MOSFET
FDMD84100 Dual N-Channel PowerTrench® MOSFET
June 2016
FDMD84100
Dual N-Channel PowerTrench® MOSFET
100 V, 21 A, 20 mΩ...
Description
FDMD84100 Dual N-Channel PowerTrench® MOSFET
June 2016
FDMD84100
Dual N-Channel PowerTrench® MOSFET
100 V, 21 A, 20 mΩ
Features
General Description
Max rDS(on) = 20 mΩ at VGS = 10 V, ID = 7 A Max rDS(on) = 32 mΩ at VGS = 6 V, ID = 5.5 A Ideal for flexible layout in secondary side synchronous
rectification
This package integrates two N-Channel devices connected internally in common-source configuration. This enables very low package parasitics and optimized thermal path to the common source pad on the bottom. Provides a very small footprint (3.3 x 5 mm) for higher power density.
Termination is Lead-free and RoHS Compliant 100% UIL tested
Applications
Isolated DC-DC Synchronous Rectifiers
Common Ground Load Switches
Top Pin 1
D2 D2 D2 G2
Bottom S1/S2
Power 3.3 x 5
Pin 1
G1 D1 D1 D1
G1 1 D1 2 D1 3 D1 4
S1,S2 to backside
8 D2 7 D2 6 D2 5 G2
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS
ID
EAS PD TJ, TSTG
Parameter
Dr...
Similar Datasheet
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