MOSFET
FDMS4435BZ P-Channel Power Trench® MOSFET
FDMS4435BZ
P-Channel PowerTrench® MOSFET
-30 V, -18 A, 20 mΩ
Features
Max r...
Description
FDMS4435BZ P-Channel Power Trench® MOSFET
FDMS4435BZ
P-Channel PowerTrench® MOSFET
-30 V, -18 A, 20 mΩ
Features
Max rDS(on) = 20 mΩ at VGS = -10 V, ID = -9.0 A Max rDS(on) = 37 mΩ at VGS = -4.5 V, ID = -6.5 A Extended VGSS range (-25 V) for battery applications High performance trench technology for extremely low rDS(on) High power and current handling capability
HBM ESD protection level >7 kV typical (Note 4)
100% UIL tested
Termination is Lead-free and RoHS Compliant
October 2014
General Description
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Applications
High side in DC-DC Buck Converters Notebook battery power management Load switch in Notebook
Top Bottom
Pin 1 S
S S G
D5 D6
4G 3...
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