FDS86140

FDS86140 N-Channel PowerTrench® MOSFET March 2011 FDS86140 N-Channel PowerTrench® MOSFET 100 V, 11.2 A, 9.8 mΩ Features General Description „ Max rDS(on) = 9.8 mΩ at VGS = 10 V, ID = 11.2 A „ Max rDS(on) = 16 mΩ at VGS = 6 V, ID = 9 A „ High performance trench technologh for extremely low rDS(on) „ High power and current handing capability in a widely used surface mount package „ 100% UIL Tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness. Applications „ DC/DC Converters and Off-Line UPS „ Distributed Power Architectures and VRMs „ Primary Swith for 24 V and 48 V Systems „ High Voltage Synchronous Rectifier D D D D SO-8 Pin 1 G S S S D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Dr...