Document
Data Sheet
10V Drive Nch MOSFET
R6004CND
Structure Silicon N-channel MOSFET
Features 1) Low on-resistance. 2) High-speed switching. 3) Wide SOA. 4) Drive circuits can be simple. 5) Parallel use is easy.
Dimensions (Unit : mm)
CPT3
(SC-63)
6.5 5.1
2.3 0.5
0.9 5.5 1.5
(1) Gate (2) Drain (3) Source
0.75
0.9 2.3
(1) (2)
0.65 (3) 2.3
0.8Min. 2.5
0.5 1.0
1.5 9.5
Application Switching
Packaging specifications
Package Type Code
Basic ordering unit (pieces) R6004CND
Taping TL
2500
Inner circuit
∗1
∗2
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Drain-source voltage
Gate-source voltage
Drain current
Continuous Pulsed
Source current (Body Diode)
Continuous Pulsed
Avalanche current
Avalanche energy
Power dissipation
Channel temperature
Range of storage temperature
VDSS VGSS
ID *3 IDP *1 IS ISP *1 IAS *2 EAS *2 PD *4 Tch Tstg
600 25 4 16
4 16 2 1.1 40 150 55 to 150
*1 Pw10s, Duty .