SQM120P06-07L

www.vishay.com SQM120P06-07L Vishay Siliconix Automotive P-Channel 60 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = -10 V RDS(on) () at VGS = -4.5 V ID (A) Configuration -60 0.0067 0.0088 -120 Single FEATURES TrenchFET® power MOSFET Package with low thermal resistance 100 % Rg and UIS tested AEC-Q101 qualified d Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TO-263 S G Top View S D G D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free TO-263 SQM120P06-07L-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a Continuous Source Current (Diode Conduction) a TC = 25 °C a TC = 125 °C Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH Maximum Power Dissipation b Operating Junction and Storage Temperature Range TC = 25 °C TC = 125 °C VDS VGS ID IS IDM IAS EAS PD TJ, Tstg LIMIT -60 ± 20 -120 -98 -120 -480 -80 320 375 125 -55 to +175 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) Notes a. Package limited. b. Pulse test; pulse width  300 μs, duty cycle  2 %. c. When mounted on 1" square PCB (FR4 material). d. Parametric verification ongoing. PCB Mount c SYMBOL RthJA RthJC LIMIT 40 0.4 UNIT V A mJ W °C UNIT °C/W S20-0525-Rev. C, 06-Jul-2020 1 Document Number: 67026 F...