JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB2×2-6L-I Power Management Transistors- MOSFET
CJMNT33 PNP Power...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB2×2-6L-I Power Management
Transistors- MOSFET
CJMNT33
PNP Power
Transistor with N-MOSFET
V(BR)DSS/BVCEO
20V -32V
RDS(on)MAX
600mΩ@4.5V 650mΩ@2.5V 700mΩ@1.8V
/
ID/IC
0.8A -1.5A
DFNWB2×2-6L-I
FEATURE z Ultra low collector-to-emitter saturation voltage z High DC current gain z Small package DFNWB2×2-6L-I
MARKING
APPLICATION z Charging circuit z Other power management in portable equipment
Equivalent circuit
ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
PNP Transistor
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous(Note1) IC Collector Current-Continuous(Note2)
ICM Collector Current-Pulse(Note3)
N-MOSFET VDS VGS
ID
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (note 1) Collector Current-Continuous(Note2)
IDM Collector Current-Pulse(Note3)
Power Dissipation, Temperature and Thermal Resistanc...
