BC847BV

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD JC(T SOT-563 Plastic-Encapsulate Transistors BC847BV DUAL TRANSISTOR(NPN+NPN) SOT-563 FEATURES z Epitaxial Die Construction z Complementary PNP Type Available (BC857BV) z Ultra-Small Surface Mount Package Marking: K4V MAXIMUM RATINGS(Ta=25℃ unless otherwise noted) Symbol Parameter Value VCBO Collector-Base Voltage 50 VCEO Collector-Emitter Voltage 45 VEBO IC Emitter-Base Voltage Collector Current -Continuous 6 0.1 PC RθJA TJ Tstg Collector Power Dissipation Thermal Resistance. Junction to Ambient Air Junction Temperature Storage Temperature 0.15 833 150 -55 to +150 Units V V V A W ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Base-emit...