Document
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T SOT-363 Plastic-Encapsulate Transistors
BC846S DUAL TRANSISTOR (NPN+NPN)
FEATURES z Two transistors in one package z Reduces number of components and board space z No mutual interference between the transistors
SOT-363
MARKING: 4Ft
MAXIMUM RATINGS(Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
80 V
VCEO
Collector-Emitter Voltage
65 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current –Continuous
0.1 A
PC Collector Dissipation
200 mW
TJ Junction Temperature
150 ℃
Tstg Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS ( Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V(BR)CBO IC=10µA,IE=0
Collector-emitter breakdown voltage
V(BR)CEO IC=10mA,IB=0
Emitter-base breakdown voltage
V(BR)EBO IE=10µA,IC=0
Collector cut-off current
ICBO
VCB=30V,IE=0
Emitter cut-off current
=I EBO IC=0, VEB .