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BC846S Dataheets PDF



Part Number BC846S
Manufacturers JCET
Logo JCET
Description DUAL TRANSISTOR
Datasheet BC846S DatasheetBC846S Datasheet (PDF)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD JC(T SOT-363 Plastic-Encapsulate Transistors BC846S DUAL TRANSISTOR (NPN+NPN) FEATURES z Two transistors in one package z Reduces number of components and board space z No mutual interference between the transistors SOT-363 MARKING: 4Ft MAXIMUM RATINGS(Ta=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 65 V VEBO Emitter-Base Voltage 6V IC Collector Curren.

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD JC(T SOT-363 Plastic-Encapsulate Transistors BC846S DUAL TRANSISTOR (NPN+NPN) FEATURES z Two transistors in one package z Reduces number of components and board space z No mutual interference between the transistors SOT-363 MARKING: 4Ft MAXIMUM RATINGS(Ta=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 65 V VEBO Emitter-Base Voltage 6V IC Collector Current –Continuous 0.1 A PC Collector Dissipation 200 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS ( Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO IC=10µA,IE=0 Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 Emitter-base breakdown voltage V(BR)EBO IE=10µA,IC=0 Collector cut-off current ICBO VCB=30V,IE=0 Emitter cut-off current =I EBO IC=0, VEB .


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