3DD13005ND86

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors 3DD13005ND86 TRANSISTOR (NPN) TO-220-3L FEATURES z Power switching applications z Low saturation voltage z High speed switching MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 1. BASE 2. COLLECTOR 3. EMITTER Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 700 420 9 4 2 150 -55-150 Unit V V V A W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage V(BR)C=BO IC= 1mA,IE 0 V(BR)CE=O IC=10mA,IB 0 V(B=R)EBO IE=1mA,IC 0 Collector cut-off current Collector cut-off current Emitter cut-off current ICBO =VCB=700V,IE 0 ICEO =VCE=400V,IB 0 =IEBO VEB=7V,IC 0 DC current...