3DD13005ND66F

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors 3DD13005ND66F TRANSISTOR (NPN) TO-220F FEATURE  Power switching applications  Good high temperature  Low saturation voltage  High speed switching MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Value 700 420 9 4 2 62.5 150 -55-150 Unit V V V A W ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Symbol Test conditions V(B=R)CBO IC= 1mA,IE 0 V(BR)C...