3DD13003F

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors 3DD13003F TRANSISTOR ( NPN ) TO-220F FEATURE Power Switching Applications MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) Symbol Parameter Value Unit 1. BASE 2. COLLECTOR 123 VCBO VCEO VEBO IC PC RθJA TJ, Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Thermal Resistance from Junction to Ambient Junction and Storage Temperature 700 V 400 V 9V 1.5 A 2W 62.5 ℃/W -55~+150 ℃ 3. EMITTER ELECTRICAL CHARACTERISTICS (Ta= 25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO I=c= 5mA,IE 0 700 V Collector-emitter breakdown voltage Emitter-base breakdown voltage V(BR)CEO V(BR)EBO Ic== 10mA,IB 0 =IE= 2mA, IC 0 400 9 V V Collector cut-off current ICBO =VCB=700V,IE 0 1 mA Collector cut-off current ICEO =VCE=400V,IB ...