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3DD13002S

Part Number	3DD13002S
Manufacturer	JCET
Description	NPN Transistor
Published	Jan 8, 2017
Detailed Description	JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13002S TRANSISTOR (NPN) TO...
Datasheet	3DD13002S PDF File

Overview

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD TO-92 Plastic-Encapsulate Transistors 3DD13002S TRANSISTOR (NPN) TO-92 FEATURES Power switching applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value VCBO VCEO VEBO IC PC RθJA Tj Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature 600 400 6 1 0.
75 167 150 -55~+150 Unit V V V A W ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-ba...

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