JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
3DD13002N46 TRANSISTOR（NPN）
T...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate
Transistors
3DD13002N46
TRANSISTOR（
NPN）
TO-92
FEATURE 3ower 6witching $pplications
1.EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
2. COLLECTOR
Symbol
Parameter
Value
Unit
3. BASE
VCBO
Collector-Base Voltage
600 V
VCEO
Collector-Emitter Voltage
00 V
VEBO
Emitter-Base Voltage
6V
IC
Collector Current -Continuous
0.8
A
PC RθJA
Collector Power Dissipation Thermal Resistance from Junction
to Ambient
0.8 156
W ℃/W
TJ Junction Temperature
150 ℃
Tstg Storage Temperature
-55~150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ
Collector-base breakdown voltage
V(BR)CBO
IC=100μA,IE=0
600
Collector-emitter breakdown voltage V(BR)CEO
IC=1mA,IB=0
00
Emitter-base breakdown voltage
V(BR)EBO
IE= 100μA,IC=0
6
Collector cut-off current
ICBO ICEO
VCB= 600V,IE=0 VCE= 500V,IB=0
Emitter cut...
