Document
STP200N3LL
N-channel 30 V, 2.15 mΩ typ., 120 A Power MOSFET in a TO-220 package
Datasheet - production data
Figure 1: Internal schematic diagram
D(2, TAB)
Features
Order code VDS STP200N3LL 30 V
RDS(on) max.
2.4 mΩ
ID 120 A
PTOT 176.5 W
Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss
Applications
Switching applications
Description
This device is an N-channel Power MOSFET with very low RDS(on) in all packages.
G(1)
S(3)
Order code STP200N3LL
AM01475v1_Tab
Table 1: Device summary
Marking
Package
200N3LL
TO-220
Packing Tube
July 2016
DocID028758 Rev 2
This is information on a product in full production.
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Contents
Contents
STP200N3LL
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics (curves).................