IGBT
STGD6M65DF2
Datasheet
Trench gate field-stop, 650 V, 6 A, low-loss M series IGBT in a DPAK package
TAB 23 1
DPAK C(2, T...
Description
STGD6M65DF2
Datasheet
Trench gate field-stop, 650 V, 6 A, low-loss M series IGBT in a DPAK package
TAB 23 1
DPAK C(2, TAB)
G(1)
E(3)
NG1E3C2T
Product status link STGD6M65DF2
Features
Maximum junction temperature: TJ = 175 °C
6 μs of minimum short-circuit withstand time
VCE(sat) = 1.55 V (typ.) @ IC = 6 A
Tight parameter distribution
Safer paralleling
Positive VCE(sat) temperature coefficient
Low thermal resistance
Soft and very fast-recovery antiparallel diode
Applications
Industrial motor control PFC converters, single phase input Uninterruptable power supplies (UPS)
Description
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.
Product summary
Order code
STGD6M65DF2
Marking
G6M65DF2
Package
DPAK
Packing
Tape and reel
DS11406 - Rev 5 - July 2023 For further information contact your local STMicroelectronics sales office.
www.st.com
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VCES
Collector-emitter voltage (VGE = 0 V)
Continuous collector current at TC = 25 °C IC
Continuous collector current at TC = 100 °C
ICP(1)
Pulse...
Similar Datasheet
- STGD6M65DF2 IGBT - STMicroelectronics