TK80E07NE
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS -H)
TK80E07NE
E-Bike/UPS/Inverter
Unit: ...
TK80E07NE
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (U−MOS -H)
TK80E07NE
E-Bike/UPS/Inverter
Unit: mm
Note : This product is designed for E-Bike / UPS / Inverter in China / India market.
z Low drain−source on-resistance
: RDS(ON) = 6.9 mΩ (typ.)
z Low leakage current
: IDSS = 10 µA (max) (VDS = 70 V)
z Enhancement mode
: Vth = 2.0~4.0 V (VDS = 10 V, ID = 0.3 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage
Drain current
DC (Note 1) DC (Note 1,4)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy (Note 3) Peak diode recovery dv/dt (Note 5) Channel temperature (Note 4) Storage temperature range (Note 4)
Thermal Characteristics
Symbol
VDSS VDGR VGSS
ID ID IDP PD
EAS
IAR EAR dv/dt Tch Tstg
Rating
70 70 ±20 80 58 240 87
16.4
40 8.7 11.5 175 −55~175
Unit
V V V A A A W...