Power Transistors
2SC1847
Silicon NPN epitaxial planar type
For medium output power amplification Complementary to 2SA0...
Power
Transistors
2SC1847
Silicon
NPN epitaxial planar type
For medium output power amplification Complementary to 2SA0886
φ 3.16±0.1
8.0+–00..15
Unit: mm
3.2±0.2
3.8±0.3 11.0±0.5
3.05±0.1
■ Features
Output of 4 W can be obtained by a complementary pair with
2SA0886 TO-126B package which requires no insulation plate for installa-
tion to the heat sink
1.9±0.1 16.0±1.0
/ ■ Absolute Maximum Ratings Ta = 25°C
e Parameter
Symbol Rating
Unit
c type) Collector-base voltage (Emitter open) VCBO
50
V
n d ge. ed Collector-emitter voltage (Base open) VCEO
40
V
sta tinu Emitter-base voltage (Collector open) VEBO
5
V
a e cycle iscon Collector current
IC
1.5
A
life d, d Peak collector current
ICP
3
A
n u duct type Collector power dissipation
PC
1.2
W
te tin Pro ued Junction temperature
Tj
150
°C
four ntin Storage temperature
Tstg −55 to +150 °C
0.75±0.1
0.5±0.1
4.6±0.2 2.3±0.2
0.5±0.1
1.76±0.1
123
1: Emitter 2: Collector 3: Base TO-126B-A1 Package
in n s followliannged disco ■ Electrical Characteristics Ta = 25°C ± 3°C
a o lude e, p Parameter
Symbol
Conditions
inc typ Collector-base voltage (Emitter open)
c tinued ance Collector-emitter voltage (Base open) M is con inten Collector-base cutoff current (Emitter open)
/Dis ma Collector-emitter cutoff current (Base open)
D ance type, Emitter-base cutoff current (Collector open)
ten ce Forward current transfer ratio * ain nan Collector-emitter saturation voltage M ainte Base-emitter satur...
