INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1716
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 160V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB1161
APPLICATIONS ·Designed for high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
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