HGT1S20N60A4S9A

Data Sheet HGT1S20N60A4S9A March 2006 600V, SMPS Series N-Channel IGBTs The HGT1S20N60A4S9A is MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49339. Ordering Information PART NUMBER PACKAGE BRAND HGT1S20N60A4S9A TO-263AB 20N60A4 NOTE: When ordering, use the entire part number. Symbol C Features >100kHz Operation at 390V, 20A 200kHz Operation at 390V, 12A 600V Switching SOA Capability Typical Fall Time. . . . . . . . . . . . . . . . . 55ns at TJ = 125oC ...