P-Channel Power MOSFET
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate MOSFETS
CJU40P04 P-Channel Power MOSF...
Description
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate MOSFETS
CJU40P04 P-Channel Power MOSFET
V(BR)DSS
-40V
RDS(on)MAX
14mΩ@-10V
ID
-40A
TO-252-2L
DESCRIPTION The CJU40P04 uses advanced trench technology and design to
provide excellent RDS(ON) with low gate charge. This device is well
1. GATE 2. DRAIN
3. SOURCE
suited for high current load applications.
FEATURES z High density cell design for ultra low RDS(ON)
z Fully characterized Avalanche voltage and current z Good stability and uniformity with high EAS
APPLICATIONS
z Excellent package for good heat dissipation z Special process technology for high ESD capability
z Power switching application z Hard switched and high frequency circuits
z Uninterruptible Power Supply
MARKING
EQUIVALENT CIRCUIT
CJU40P04= Device code Solid dot = Green molding compound device, if none, the normal device XXX=Date Code
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Drain-Source Voltage
Parameter
G...
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