N-Channel Power MOSFET
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate MOSFETS
CJU4828 N-Channel MOSFET
DESCR...
Description
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate MOSFETS
CJU4828 N-Channel MOSFET
DESCRIPTION The CJU4828 uses advanced trench technology to provide excellent
RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
TO-252-2L
1. GATE 2. DRAIN 3. SOURCE
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (t ≤10s) (note 1) Power Dissipation Thermal Resistance from Junction to Ambient (t ≤10s) (note 1) Power Dissipation (TC=25℃) Thermal Resistance from Junction to Case (t ≤10s) (note 1) Avalanche Current (note 2) Repetitive Avalenche Energy 0.1mH (note 2) Junction Temperature Storage Temperature
Symbol
VDS VGS ID PC RθJA PC RθJC IAR,IAS EAR,EAS TJ TSTG
Value
60 ±20 4.5 1.25 100 12.5 10 19 18 150 -55~ +150
Units
V V
A W ℃/W W ℃/W A mJ ℃ ℃
A,May,2012 B,May,2012
Electrical characteristics (Ta=25℃ unless otherwise ...
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