CJU4828

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU4828 N-Channel MOSFET DESCRIPTION The CJU4828 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. TO-252-2L 1. GATE 2. DRAIN 3. SOURCE Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (t ≤10s) (note 1) Power Dissipation Thermal Resistance from Junction to Ambient (t ≤10s) (note 1) Power Dissipation (TC=25℃) Thermal Resistance from Junction to Case (t ≤10s) (note 1) Avalanche Current (note 2) Repetitive Avalenche Energy 0.1mH (note 2) Junction Temperature Storage Temperature Symbol VDS VGS ID PC RθJA PC RθJC IAR,IAS EAR,EAS TJ TSTG Value 60 ±20 4.5 1.25 100 12.5 10 19 18 150 -55~ +150 Units V V A W ℃/W W ℃/W A mJ ℃ ℃ A,May,2012 B,May,2012 Electrical characteristics (Ta=25℃ unless otherwise ...