CJU03N80

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU03N80 N-Channel Power MOSFET GENERAL DESCRIPTION The CJU03N80 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. TO-252-2L FEATURE z Excellent package for good heat dissipation z Ultra low gate charge z Low reverse transfer capacitance z Fast switching capability z Avalanche energy specified 1. GATE 2. DRAIN 3. SOURCE APPLICATION z Power switching application Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Single Pulsed Avalanche Energy (note1) Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Range Maximum lead temperature for soldering purposes , 1/8”from case for 5 seconds Symbol VDS VGS ID IDM EAS RθJA TJ TSTG TL Value 800 ±30 3 10 170 100 150 -55...