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A1SHB

P-Channel Enhancement Mode Power MOSFET

Description

MS23P01S P-Channel Enhancement Mode Power MOSFET Description The MS23P01S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -20V,ID = -2.6A RDS(ON) < 160mΩ @ VGS=-2.5V RDS(ON) < 120mΩ ...

Bruckewell

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