A1SHB

SHENZHEN YANGJING MICROELECTRONICS CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS SI2301 P-Channel 20-V(D-S) MOSFET FEATURE TrenchFET Power MOSFET APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: A11 SHB SOT-23 1. GATE 2. SOURCE 3. DRAIN Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Thermal Resistance from Junction to Ambient(t ≤5s) Junction Temperature Storage Temperature VDS VGS ID IDM IS PD R θJA TJ Tstg Value -20 ±8 -2.3 -10 -0.72 0.35 357 150 -55 ~+150 Unit V A W ℃/W ℃ YANGJING MICROELECTRONICS www.szyangjing.com 4007-888-606 2 Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Static Drain-source breakdown voltage Gate-source threshold voltage Gate-source leakage Zero gate voltage drain current Drain-source on-state resistance a Forward transcond...